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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS * MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range * Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. PINNING DESCRIPTION PIN BFG590 1 2 3 4 collector base emitter emitter BFG590/X collector emitter base emitter handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. MARKING TYPE NUMBER BFG590 BFG590/X CODE N38 N44 Fig.1 Simplified outline SOT143B. 1 Top view 2 MSB014 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |S21|2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts 60 C IC = 35 mA; VCE = 8 V IC = 0; VCE = 8 V; f = 1 MHz IC = 80 mA; VCE = 4 V; f = 1 GHz IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C CONDITIONS open emitter open base - - - - 50 - - - - MIN. - - - - 90 0.7 5 13 11 TYP. MAX. 20 15 200 400 280 - - - - pF GHz dB dB UNIT V V mA mW 1998 Oct 02 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 60 C; note 1 VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 60 C; see Fig.2; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 3 200 400 +150 175 V V V mA mW C C UNIT handbook, halfpage 600 MBG249 Ptot (mW) 400 200 0 0 50 100 150 Ts ( o C) 200 Fig.2 Power derating curve. 1998 Oct 02 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE fT Cre GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain transition frequency feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IE = 0 IE = 0.1 mA; IC = 0 VCB = 10 V; IE = 0 IC = 70 mA; VCE = 8 V; see Fig.3 IC = 80 mA; VCE = 4 V; f = 1 GHz; see Fig.5 IC = 0; VCB = 8 V; f = 1 MHz; see Fig.4 IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C IC = 80 mA; VCE = 4 V; f = 2 GHz; Tamb = 25 C |S21|2 Note insertion power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C MIN. 20 15 3 - 60 - - - - - TYP. - - - - 120 5 0.7 13 7.5 11 MAX. - - - 100 250 - - - - - GHz pF dB dB dB UNIT V V V nA collector-emitter breakdown voltage IC = 10 mA; IB = 0 S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) 1998 Oct 02 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X handbook, halfpage 250 MRA749 handbook, halfpage 1.2 MLC057 hFE 200 C re (pF) 0.8 150 100 0.4 50 0 10-2 10-1 1 10 IC (mA) 102 0 0 2 4 6 8 10 VCB (V) VCE = 8 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 8 MLC058 fT (GHz) 6 4 2 0 10 I C (mA) 102 VCE = 4 V; f = 1 GHz. Fig.5 Transition frequency as a function of collector current; typical values. 1998 Oct 02 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X handbook, halfpage 30 MLC059 handbook, halfpage 12 MLC060 gain (dB) 20 gain (dB) 8 G max G UM G max G UM 10 4 0 0 20 40 60 100 80 I C (mA) 0 0 20 40 60 100 80 I C (mA) f = 900 MHz; VCE = 4 V. f = 2 GHz; VCE = 4 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MLC061 gain (dB) handbook, halfpage 50 MLC062 gain (dB) 40 G UM 40 G UM MSG MSG 30 30 20 20 10 G max 10 G max 0 10 102 103 f (MHz) 104 0 10 102 103 f (MHz) 104 IC = 20 mA; VCE = 4 V. IC = 80 mA; VCE = 4 V. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 1998 Oct 02 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 1.0 1 135 o 0.5 3 GHz 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 5 0.2 40 MHz 0.5 135 o 1 2 5 45 o MGC882 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 . Fig.10 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 10 0o 135 o 45 o 90 o IC = 80 mA; VCE = 4 V. MGC805 Fig.11 Common emitter forward transmission coefficient (S21); typical values. 1998 Oct 02 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 0.25 40 MHz 0.20 0.15 0.10 0.05 0o 135 o 45 o 90 o IC = 80 mA; VCE = 4 V. MGC803 Fig.12 Common emitter reverse transmission coefficient (S12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 3 GHz 1 2 5 0o 0 0.2 5 0.2 40 MHz 5 0.5 135 o 1 2 45 o MGC804 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 . Fig.13 Common emitter output reflection coefficient (S22); typical values. 1998 Oct 02 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Oct 02 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1998 Oct 02 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistors NOTES BFG590; BFG590/X 1998 Oct 02 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/03/pp12 Date of release: 1998 Oct 02 Document order number: 9397 750 04346 |
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